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IRFPG30PBF資料 | |
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IRFPG30PBF PDF Download |
File Size : 116 KB
Manufacturer:IR Description: There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150C. TJ(pk) may be calculated from the data in Figure 6. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. |
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1PCS | 100PCS | 1K | 10K | ||
價(jià) 格 | |||||
型 號(hào):IRFPG30PBF 廠 家:IR 封 裝:IR 批 號(hào):18+ 數(shù) 量:1508 說 明: 產(chǎn)品種類:MOSFET 晶體管極性:N-Channel 汲極/源極擊穿電壓:1000 V 閘/源擊穿電壓:+/- 20 V 漏極連續(xù)電流:3.1 A 導(dǎo)通電阻:5 Ohms 配置:Single 最大工作溫度:+ 150 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-247AC 封裝:Tube 商標(biāo):Vishay / Siliconix 下降時(shí)間:29 ns 最小工作溫度:- 55 C 功率耗散:125 W 上升時(shí)間:24 ns 工廠包裝數(shù)量:25 典型關(guān)閉延遲時(shí)間:89 ns |
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